Publication date: 21st July 2025
Thin film transistors (TFTs) built using lead-tin perovskite have gained immense attention due to its excellent device mobilities along with high on-off ratios, which makes such TFTs perfect devices for switches and digital applications. However, facile oxidation of tin (Sn) from +2 to +4 state leads to undesired doping, resulting in a loss of channel modulation. In this work, the influence of A-site cation on the performance and stability of TFT is evaluated. We report an ambient stable (RH: >70%, RT: 25°c) TFT with a threshold voltage (Vth) of 4.7 V and an on-off ratio of nearly 106 ; stable for an hour of exposure without encapsulation. The stability of the devices were evaluated by observing the shift in transfer characteristics of the control and target composition systems as shown in TOC Figure. The gate modulation in control device is lost within 5 minutes of air exposure (TOC Figure (a)) while target device shows gate modulation even after an hour of air exposure (TOC Figure (b)). This stability is attributed to the substitution of appropriate A-site cation, which may have led to increased defect formation energy and thus lowered oxidation and doping, as evidenced by XPS and Hall measurements, respectively. Devices with such low Vth and high on-off ratios help in realizing circuits with lower operating power and well-defined, wide range on-off states.
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