Publication date: 21st July 2025
Perovskite solar cells (PSCs) exhibit excellent efficiencies, but face challenges related to interfacial and environmental stability.1 Here, we present two quantum dot (QD)-based strategies to address these limitations. In the first, CdS QDs are introduced as an interfacial layer between SnO₂ and the perovskite absorber. This approach reduces surface oxygen vacancies and hydroxyl groups, as confirmed by XPS, while Kelvin probe force microscopy reveals enhanced surface potential uniformity. Perovskite films grown on CdS-passivated SnO₂ show larger grain sizes and reduced PL intensity, suggesting improved charge extraction. Time-resolved PL confirms a significant increase in electron transfer rate leading to ~15% higher device efficiency. Previously, we also investigated halide exchange at the heterojunction between perovskite QDs and 3D perovskite films using in situ photoluminescence.2 By extracting the activation energy of the Br-to-I exchange, we demonstrate its role in defect passivation and suppression of bimolecular recombination. QDs also enable favorable energy level alignment, enhancing hole extraction and stability under thermal stress. Their hydrophobic ligands further protect the perovskite against moisture ingress. In summary QD-based interfacial engineering strategies can improve both performance and durability of PSCs.
We acknowledge FAPESP for the financial support under grants 2024/05914-5, 2023/10395-4, and 2017/11986-5, as well as Shell and the strategic importance of the support provided by ANP (Brazil’s National Oil, Natural Gas, and Biofuels Agency).