Publication date: 21st July 2025
Subtle material variations in halide-perovskite devices can lead to profound changes in their electrical behavior, transitioning from rectifying, diode-like responses to rich memristive characteristics. In our recent work, we observe that specific modifications - without altering the device architecture - induce strong inverted hysteresis, conductivity potentiation under voltage pulse trains, and inductive features in impedance spectroscopy. These findings suggest that intrinsic ionic-electronic interactions govern the switching behavior, offering insights into the origin of memristive effects in this material system. To interpret these results, we build on our earlier modeling of relaxation dynamics, where a voltage-dependent characteristic time was shown to mediate the crossover from volatile to non-volatile response. This framework helps us understand how local dynamic processes relate to global device hysteresis and impedance features. The combination of experimental observation and modeling advances our understanding of memristive switching and may contribute to identifying design principles for robust, filament-free memory devices.
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