Publication date: 21st July 2025
Halide perovskites possess mixed ionic and electronic conductivity, and the loosely bound halide ions leverage ion migration, which permits their application in memristors. Three-dimensional perovskites are plagued not only by their low moisture stability, but also by uncontrolled transport due to their polycrystalline nature that limits their application in memristive applications. Dimension reduction in perovskites allows improving the stability as compared to the bulk perovskites, and in this vein, layered perovskites are adaptable due to the wide choice of cation, and allow the tuning of microstructural and electrical properties. However, their large dielectric and quantum confinement limit their nonlinear conductance changes. To improve the neuromorphic device efficiency and training, it is paramount to achieve linear and symmetrical conductance changes through the Dion–Jacobson based layered perovskites. Vertically oriented layered perovskite-based synapses displayed a high device yield, low variation with synaptic weight storing capability, multi-level analogue states with long retention. Our developed vertically oriented perovskites eliminate the gaps between inorganic layers, which in turn allow the halide vacancies to migrate homogeneously regardless of grain boundaries to boost neuromorphic properties.
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