Publication date: 21st July 2025
Several recently reported high-efficiency devices incorporate 2D layers to passivate 3D perovskites, leading to improved performance metrics such as open-circuit voltage (Voc) and long-term stability. Motivated by these advances, we investigated the growth of oriented 2D Ruddlesden–Popper metal halides by pulsed laser deposition on various substrates. While oriented growth is found to be substrate-independent, the stability of the 2D phase is strongly influenced by the underlying substrate. Specifically, (PEA)₂PbI₄ films grown on strained epitaxial MAPbI₃ remain stable for over 184 days, showing no signs of cation exchange. In contrast, when deposited onto single crystals of MAPbI₃, the (PEA)₂PbI₄ films undergo a phase transition from n = 1 to n > 3, driven by cation exchange. The optoelectronic properties of these 2D/3D interfaces were analyzed both in situ and ex situ, offering insights into the growth mechanisms and material characteristics required to achieve stable vapor-phase heterojunctions. We discuss how these findings can be extended to a broader range of 2D/3D material systems and explore their implications for future device applications.
Ref. https://doi.org/10.1038/s41699-025-00571-3
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