Publication date: 21st July 2025
Memristors are one of the four fundamental electrical components, linking key quantities such as current, voltage, charge (the integral of current), and magnetic flux (the integral of voltage). First theorized in 1971 and experimentally realized in 2009, memristors have attracted considerable research attention due to their distinctive properties, particularly in neuromorphic computing and memory storage.
While memristive behavior is often studied in dedicated devices, it can also arise as a parasitic effect in other systems [1,2]. Despite its significance, research on parasitic memristive phenomena remains sparse, especially in comparison to resistors and capacitors.
In this work, we present a modeling approach for integrating parasitic memristive effects into real device simulations. Focusing on solar cells, we extend the standard single-diode model to incorporate second-order parasitic memristive effects. We show how interface-related charge accumulation can induce memristive behavior [3], along with a zero-bias voltage shift. Additionally, we include a memristor component to account for material-level changes in the semiconductor, particularly noticeable in the diode’s reverse-bias region.
As a case study, we analyze a Mo/MoSe₂/Sb₂Se₃(10 nm)/CdS(2 nm)/ITO solar cell structure, revealing unexpected memristive properties. These are investigated through triangular waveform and pulsed voltage experiments, with transient current responses recorded. Our enhanced single-diode model, modified to include parasitic memristive effects, shows strong agreement with experimental data, validating the presence of memristive behavior in the system.
The authors from UPC belong to the Micro and Nanotechnologies for Solar Energy Group (MNT-Solar) Consolidated Research Group of the “Generalitat de Catalunya” (2021 SGR 01286). This work has made use of the Spanish ICTS Network MICRONANOFABS.
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