Lead-Free Halide Perovskite Quantum Dots: Surface Passivation, Photophysical Properties, and Application to Optoelectronic Devices
QING SHEN a
a Faculty of Informatics and Engineering, The University of Electro-Communications, Japan, 1-5-1 Chofugaoka, Chofu, Tokyo, Japan
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
A4 Fundamental understanding of halide perovskite materials and devices - #PeroFun
València, Spain, 2025 October 20th - 24th
Organizers: Krishanu Dey and Iván Mora-Seró
Invited Speaker, QING SHEN, presentation 351
Publication date: 21st July 2025

Lead-free halide perovskite quantum dots (QDs), including Sn-based and double perovskite QDs, have gained increasing attention as environmentally benign alternatives to lead-based perovskites for optoelectronic applications. These materials offer tunable bandgaps, strong light absorption, and excellent solution processability. However, achieving high crystal quality, defect tolerance, and efficient charge transport remains critical to unlocking their full potential.

In our recent studies, we have successfully synthesized phase-stable, low-defect Sn-based, Sn–Pb alloyed, and double perovskite QDs with enhanced photoluminescence quantum yields (PL QYs) and long carrier lifetimes [1–6]. Strategies such as Sn(IV) suppression and metal ion doping effectively minimized trap-mediated recombination and lattice distortion. Ultrafast transient absorption (TA) and time-resovled photoluminescence (TRPL) further revealed negligible electron or hole trapping, consistent with enhanced PL QY in optimized samples.

Focusing on double perovskite QDs, we developed Sb³/Mn² co-doped CsNaInCl systems that exhibit efficient broadband white-light emission via self-trapped excitons. This co-doping approach not only induces white emission but also suppresses cation disorder, leading to PL QYs approaching 100%. To improve device performance, we replaced long-chain ligands with short-chain alternatives[8], which increased film conductivity by nearly 20-fold and reduced the hole-injection barrier by 0.4 eV. These improvements enabled light-emitting diodes (LEDs) with an external quantum efficiency (EQE) of 0.86%—the highest reported to date for double perovskite QD-based LEDs.

In this talk, we will present our recent progress in the synthesis, surface passivation, and photophysical characterization of lead-free perovskite QDs, and discuss their promising applications in optoelectronic devices such as LEDs. Our findings offer new insights into the design principles for achieving high-efficiency, stable, and environmentally friendly perovskite-based devices.

 

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