The evolution of inkjet-printed electronics, from resistive memories to multifunctional optoelectronic systems, has opened transformative pathways for neuromorphic computing, photonic logic, and intelligent sensing platforms. The unique advantages of inkjet printing, including additive patterning, scalable fabrication, and compatibility with flexible substrates, enable the precise engineering of complex heterostructures that integrate charge, light, and memory functionalities.

Our work began with the development of fully inkjet-printed metal-insulator-metal (MIM) structures using high-k HfO₂ dielectrics. These devices demonstrated low-power, non-volatile switching, strong retention, and uniformity suitable for passive memory and selector applications, establishing a scalable platform for printed memory arrays. Building upon this, we transitioned to 2D materials, particularly hexagonal boron nitride (h-BN), achieving devices with high endurance, reproducibility, and tolerance to stochastic variation. These characteristics enabled reliable operation of logic-in-memory (LiM) architectures, including MAGIC gates and current-controlled logic implemented on printed substrates, supported by Monte Carlo modeling and experimental validation.

This foundation set the stage for the next leap: the integration of halide perovskites as multifunctional active layers. Leveraging the photoelectric tunability of Sn-based and CsPbBr₃ nanocrystal perovskites, we demonstrated a new generation of printed devices capable of modulating light in response to electrical and optical history. In particular, TEA₂SnI₄, PEA₂SnI₄, and FASnI₃-based devices were inkjet-patterned within vertical cavity and multilayer structures to exhibit persistent photoconductivity, state-dependent photoluminescence, and feedback-tunable random lasing—hallmarks of optical memristors and photonic synapses.

Through careful control of ink formulation, solvent selection (e.g., DMSO over DMF), annealing conditions, and dimensionality engineering, these perovskite systems revealed behaviors akin to memristive switching, but with the added versatility of light-assisted logic, programmable spectral response, and in-memory photonic modulation. Importantly, their environmental compatibility, mechanical flexibility, and seamless integration with previously demonstrated memory stacks affirm their suitability for monolithic optoelectronic platforms.

This research trajectory, from printed HfO₂ and h-BN memories to light-responsive perovskite-based systems, illustrates the maturation of inkjet printing into a core enabler for future electronics. By uniting memory, emission, detection, and logic on a single substrate, we envision adaptive, multifunctional, and sustainable devices for applications in neuromorphic computing, wearable photonics, and reconfigurable metasurfaces.