Publication date: 21st July 2025
Ion migration in halide perovskites and its relation with the external contacts has very important implications in solar cells, photodetectors, X-ray detectors and memristors.1 Ion migration poses a negative effect in some optoelectronic applications controlling the hysteresis and the long term stability. On the other hand, the ionic conductivity of halide perovskite is responsible for a memory effect that can be used in resistive memories expanding the applications for this type of materials. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite including 2D perovskites,2 the nature of the buffer layer3 and the nature of the metal contact4. We show that in order to efficiently promote migration of metal contact the use of pre-oxidized metals greatly enhance the performance of the memristor and reduces the energy requirements. Importantly, these halide perovskite devices show potential in both volatile and non-volatile memristive devices that find applications in neuromorphic computing.5 Overall, the interplay between migrating ions and chemical interactions with the contacts can be extrapolated to the different optoelectronic devices fabricated with halide perovskites.
References
1. Sakhatskyi, K.; John, R. A.; Guerrero, A.; Tsarev, S.; Sabisch, S.; Das, T.; Matt, G. J.; Yakunin, S.; Cherniukh, I.; Kotyrba, M. J. A. E. L., Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites. ACS Energy Lett. 2022, 7 (10), 3401-3414.
2. Solanki, A.; Guerrero, A.; Zhang, Q.; Bisquert, J.; Sum, T. C., Interfacial Mechanism for Efficient Resistive Switching in Ruddlesden–Popper Perovskites for Non-volatile Memories. J. Phys. Chem. Lett. 2020, 11 (2), 463-470.
3. Gonzales, C.; Guerrero, A., Mechanistic and Kinetic Analysis of Perovskite Memristors with Buffer Layers: The Case of a Two-Step Set Process. J. Phys. Chem. Lett. 2023, 14 (6), 1395-1402.
4. Pérez-Martínez, J. C.; Berruet, M.; Gonzales, C.; Salehpour, S.; Bahari, A.; Arredondo, B.; Guerrero, A., Role of Metal Contacts on Halide Perovskite Memristors. Adv. Funct. Mater. 2023, 2305211.
5. Pendyala, N.-K.; Gonzales, C.; Guerrero, A., Decoupling Volatile and Nonvolatile Response in Reliable Halide Perovskite Memristors. Small Structures 2024, n/a (n/a), 2400380.
AG. thank MCIN/AEI /10.13039/501100011033/ and FEDER “Una manera de hacer Europa” for financial support under the project PID2022-141850OB-C21.
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