Ion transport within van der Waals crystals
Wooyoung Shim a
a Department of Materials Science and Engineering, Yonsei University, Seoul, Korea (the Republic of).
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
D3 Brain-Inspired Computation: Memristors, Oscillators, and Networks - #NeuroComp
València, Spain, 2025 October 20th - 24th
Organizers: Juan Bisquert, Beatriz Noheda and Martin F. Sarott
Invited Speaker, Wooyoung Shim, presentation 367
Publication date: 21st July 2025

The force-flux relationship is a cornerstone of non-equilibrium thermodynamics and serves as the foundation for understanding how mass, heat, and charge are transported under external gradients. According to the Onsager reciprocal relations, these transport processes are governed by linear relationships between generalized fluxes (such as particle current or heat flow) and their conjugate forces (such as chemical potential, temperature, or electrical potential gradients). Importantly, these relations also account for cross-coupling effects—for example, how a voltage gradient can drive not only charge flow but also mass transport via ion migration. In this presentation, I will examine ion transport specifically under an applied voltage gradient and show how its behavior critically depends on the diffusion medium. I will focus in particular on layered materials with van der Waals (vdW) gaps, where ions can move through channels with minimal steric hindrance and low diffusion barriers. These unique structural characteristics enable directional, selective, and tunable ion transport. Such materials are especially promising for next-generation technologies: in semiconductors, they can be used for ion-based memory or neuromorphic devices; in metallic systems, for reconfigurable interconnects or electrochemical switching; and in insulators, for ultra-thin membranes that achieve ion sieving with high selectivity and low energy cost. Through this exploration, I aim to highlight the deep interplay between transport theory and material design in developing functional ion-based devices.

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info