Publication date: 21st July 2025
Organic-inorganic halide perovskite (OIHP)-based resistive random-access memory (ReRAM) devices have emerged as promising candidates for next-generation non-volatile memory technologies [1], [2]. Recently, two-dimensional (2D) OIHPs have garnered considerable attention for ReRAM applications owing to their inherent structural tunability and superior environmental stability [3], [4]. In this work, we have demonstrated the resistive switching (RS) characteristics of ReRAM devices fabricated using pure 2D Ruddlesden-Popper (RP) perovskites, namely (TEA)2PbBr4 and (TEA)2PbI4. The devices exhibit stable and reproducible bipolar RS behavior, achieving a high ON/OFF current ratio on the order of 104. Furthermore, the devices demonstrate excellent data retention exceeding 104 seconds and robust endurance performance, sustaining over 200 switching cycles. Additionally, I-V characteristics were analyzed to determine dominant charge transport mechanisms, revealing distinct conduction behaviors and indicating that resistive switching arises from field-induced formation and rupture of conductive filaments. Notably, the devices retain their RS properties for more than 45 days under ambient environmental conditions [5]. These findings highlight the strong potential of 2D RP perovskite-based ReRAMs for reliable, high-performance memory and logic applications in future electronics.
We are thankful to Advanced Material Research Centre (AMRC), Indian Institute of Technology Mandi for providing the experimental facilities and Government of India for financial support (grant no. CRG/2022/006320).
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