Publication date: 21st July 2025
In this work, we introduce CMOS-compatible self-rectifying resistive switching devices based on amorphous GaOx grown by plasma-enhanced atomic layer depositon (PE-ALD) at a low temperature of 250
First, we will present how oxygen vacancies can be introduced in Ga2O3 thin films by shortening the oxygen plasma exposure time at each ALD cycle [1], which results in semiconducting thin films [2].
Second, we will discuss the bipolar resistive switching properties of Ti/GaOx/W devices [3]. These forming-free self-rectifying devices exhibit an interfacial/bulk type resistive switching. The switching process originates from a field-driven oxygen exchange between the interfacial TiOx and the GaOx layers as well as from the charging/discharging of interfacial trap states. Highly reproducible multi-level resistance states are obtained under identical pulses with a close-to-linear behaviour in potentiation and depression. Since the operating voltage is quite large (8 V), further engineering of the stack is needed for compatibility with the XFAB 180 nm CMOS technology.
Third, we will discuss the properties of devices with controlled bilayer stacks involving a dielectric layer – either HfO2 or Al2O3 – deposited by ALD at 250
. For W/GaOx/HfO2/Ti devices, VSet is reduced down to 3.2 V (4 nm HfO2) and for W/GaOx/Al2O3/Ti devices, VSet is as low as 2.0 V (3 nm Al2O3). The devices operate at low power, with low writing (~ 260 nA/µm²) and reading currents (~100- 600 pA/µm²).
Finally, we will illustrate the potential of W/GaOx/Al2O3/Ti devices for neuronal activity detection with the detection of the high frequency activity of neuronal culture cells.
Our results highlight the potential of GaOx-based bilayer memristive devices for BEOL integration on CMOS chips, to build a hybrid memristor / CMOS Micro Electrode Array (MEA) platform that can achieve on-chip neuronal signal processing in real time.
The funding of the Deutsche Forschungsgemeinschaft (DFG) within the project “Hybrid MEMristor-CMOS Micro Electrode Array bio-sensing platform” (MEMMEA – project number
441918103) in the framework of the DFG SPP 2262 MemrisTec (project number 422738993) is gratefully acknowledged. GraFOx II, a Leibniz ScienceCampus, is also acknowledge.
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