Ion Diffusion in PEDOT:PSS: Vertical Structure and Organic Electrochemical Transistors
HEYI ZHANG a b, Gonzalo Rivera-Sierra a, Jenifer Rubio-Magnieto a, Juan Bisquert a, Enrique H Balaguera c, Anis Allagui d
a Instituto de Tecnología Química (ITQ), Universitat Politècnica de València- Consejo Superior de Investigaciones Científicas (UPV-CSIC), València, 46022 Spain
b Institute of Advanced Materials (INAM), Universitat Jaume I, Castelló, 12006 Spain
c Escuela Superior de Ciencias Experimentales y Tecnología (ESCET), Universidad Rey Juan Carlos, Móstoles, Madrid, 28933 Spain
d Department of Sustainable and Renewable Energy Engineering, University of Sharjah, Sharjah, PO Box 27272 UAE
Proceedings of MATSUS Fall 2025 Conference (MATSUSFall25)
D4 Organic Electrochemical Transistors – Materials and Device Properties - #OectMap
València, Spain, 2025 October 20th - 24th
Organizers: Scott Keene, Sabine Ludwigs and Tom van der Pol
Poster, HEYI ZHANG, 434
Publication date: 21st July 2025

Ion transport governs the transient response of mixed ionic–electronic conductors (MIECs). In this work, we provide complementary insights into PEDOT:PSS through two device platforms. First, in vertical two-terminal structures, we demonstrate for the first time that time-domain (chronoamperometry) and frequency-domain (impedance spectroscopy) measurements yield quantitatively consistent descriptions of anomalous ion diffusion. This establishes a direct correspondence between domains, a critical step toward a unified transport mechanism in MIECs.

Building on this foundation, we investigated organic electrochemical transistors (OECTs) and experimentally validated the diffusion–transport model proposed by Bisquert and Tessler. For the first time, all four classes of transient responses predicted by the model—positive/negative spikes and monotonic decays—are observed and mapped across bias conditions. Drain- and gate-current analyses consistently yield the ionic diffusion time τd, confirming the model’s predictive power in real devices.

Finally, we clarify the origin of τd and its interplay with the electronic transit time τe. The intrinsic τd is primarily set by the gate-voltage step ΔVg and channel thickness, while τe shapes the transient waveform without altering τd. Gate currents provide the most direct probe of τd, while drain currents highlight the competition between τd and τe.

Together, these results (i) establish time–frequency correspondence in vertical PEDOT:PSS devices, (ii) provide the first full experimental validation of the four-class diffusion–transport framework in OECTs, and (iii) identify the respective roles of τd and τe. This unified picture advances the mechanistic understanding of ionic dynamics and informs the design of MIEC-based bioelectronic and neuromorphic devices.

The work was funded by the European Research Council (ERC) via Horizon Europe Advanced Grant, grant agreement n° 101097688 (“PeroSpiker”).

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