Publication date: 21st July 2025
Transient photoluminescence microscopy (TPLM) enables direct visualization of charge-carrier transport in semiconductors with sub-nanosecond temporal resolution and nanometre-scale spatial precision. In this technique, a diffraction-limited carrier population is photoexcited and the evolution of its spatial distribution is quantified via space- and time-resolved detection of radiative recombination [1].
Here, we compare two approaches for probing carrier dynamics in the 2D perovskite PEA₂PbI₄: (i) traditional raster-scanned single-point avalanche photodiode (APD) detection with time-correlated single-photon counting (TCSPC) and (ii) a time-gated intensified CCD (ICCD) that records wide-field images at controlled delays. Since APD measurements are confined to a single location, constructing spatial maps requires raster scanning, which increases acquisition times and also susceptibility to laser focus drift. By contrast, the ICCD effectively acts as a megapixel array of lifetime detectors yielding an x–y frame at each time delay. Sub-nanosecond gating with diffraction-limited laser spot over a wide field of view has been demonstrated for halide-perovskite thin films, enabling rapid accumulation of high-SNR frames at each delay [2].
We present in detail the advantages of ICCD based imaging as compared to raster-scanned APD measurements, providing detailed guidelines on optimal data-acquisition and data-analysis strategies. We will demonstrate the specific advantages of wide-field imaging for characterizing carrier diffusion in disordered, anisotropic energy landscapes.
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