Additive Engineering of Thermally Evaporated FAPbI3 Solar Cells
Elena Siliavka a b, Thalia Pandelides a b, Vladimir V. Shilovskikh a b, Angelika Wrzesinska-Lashkova a b, Zongbao Zhang a b, Ran Ji a b, Boris Rivkin a b, Yana Vaynzof a b
a Chair for Emerging Electronic Technologies, Technical University of Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany
b Leibniz-Institute for Solid State and Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Future of Metal Halide Perovskites: Fundamental Approaches and Technological Challenges - #PerFut25
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Annalisa Bruno and Pablo P. Boix
Oral, Elena Siliavka, presentation 244
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.244
Publication date: 16th December 2024

In the past decade, the efficiency of lead halide perovskite-based solar cells has reached levels comparable to those of established silicon solar cells. This advancement makes perovskite solar cells (PSCs) particularly promising for future commercial applications. However, challenges such as long-term stability and scalability still need to be addressed before they can be commercially viable. Additive engineering is one approach that holds the potential for overcoming these challenges.

In this study, we presented a novel additive engineering approach for the formation of FAPbI3 perovskite layers by vapor deposition. The approach is based on a two-step deposition process in which PbI2 is vaporized together with additives. We found using SEM, XRD, UV-vis, and XPS that the additives significantly improve the efficiency of the precursor conversion process to FAPbI3 and lead to an improved microstructure of the perovskite films. When integrated into p-i-n solar cells without interfacial modifications, FAPbI3 layers achieve an efficiency of 18.34%, which is significantly superior to devices fabricated without additive engineering.

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