Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.253
Publication date: 16th December 2024
Ion migration in halide perovskites and its relation with the external contacts has very important implications in solar cells, photodetectors, X-ray detectors and memristors.1 Ion migration poses a negative effect in some optoelectronic applications controlling the hysteresis and the long term stability. Here we discuss the effect of the dimensionality of the crystalline structure of halide perovskites in relation to the ion migration and the connection with stability of solar cells.1 Alternatively, the stability can be enhanced by an adequate selection of the external contacts to be compatible with the migrating ions. On the other hand, the ionic conductivity of halide perovskite is responsible for a memory effect that can be used in resistive memories expanding the applications for this type of materials. Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite including 2D perovskites,2 the nature of the buffer layer3 and the nature of the metal contact4. We show that in order to efficiently promote migration of metal contact the use of pre-oxidized metals greatly enhance the performance of the memristor and reduces the energy requirements. Importantly, these halide perovskite devices show potential in both volatile and non-volatile memristive devices that find applications in neuromorphic computing.5 Overall, the interplay between migrating ions and chemical interactions with the contacts can be extrapolated to the different optoelectronic devices fabricated with halide perovskites.
We thank MCIN/AEI /10.13039/501100011033/ and FEDER “Una manera de hacer Europa” for financial support under the project PID2022-141850OB-C21.
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