Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.262
Publication date: 16th December 2024
The ionic conductivity of halide perovskite is responsible for a memory effect that can be used in resistive memories.1,2 The ionic conductivity can be controlled by the dimensionality of the halide perovskite and this is connected to the long-term stability of several optoelectronic devices. In this work, we discuss how the interplay between ion migration and the chemical reactivity with the external contacts is key to maximize the reliability of the devices, to control the working mechanism and to reduce the energy consumption. Conductive and insulating states are formed via migration of halide vacancy and electrochemically active metals. We show that the working mechanism and performance of the memory devices can be tuned and modified from volatile to non-volatile response.3 Several configurations are evaluated in which structural layers are modified systematically: formulation of the perovskite,4 the nature of the buffer layer5 and the nature of the metal contact3,6. We show that in order to efficiently promote migration of metal contact the use of pre-oxidized metals greatly enhance the performance of the memristor and reduces the energy requirements. Overall, we provide solid understanding on the operational mechanism of halide perovskite memristors that has enabled increased stabilities approaching 105 cycles with well separated states of current and further improvements expected.
This study forms part of the Advanced Materials programme and was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and by Generalitat Valenciana (MFA/2022/055).
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