Antimony selenide (Sb₂Se₃) has emerged as a promising photoelectric material owing to its excellent material properties. The power conversion efficiency of Sb₂Se₃ thin-film solar cells has reached an impressive 10.57% within a decade. Despite rapid development, the efficiency of Sb₂Se₃ thin-film solar cells remains significantly below the theoretical prediction of 30%. Therefore, considerable efforts are still required to enhance the material quality of Sb₂Se₃, a critical factor in boosting solar cell efficiency. Post-deposition annealing treatments have been carried out as an effective method to improve the qualities of Sb₂Se₃ thin films, such as crystallinity and optical properties. However, these treatments typically require tens of minutes or more of thermal annealing at high temperatures (>300 °C), which severely limits both the throughput and substrate choice. For the first time, a low thermal budget annealing technique was used for post-deposition annealing of Sb₂Se₃, which was carried out to enhance the film properties of Sb₂Se₃ thin film solar cells. Photonic curing uses pulsed light annealing with a broadband light source and Sb₂Se₃ samples annealed with single pulse light in pulse lengths of 1 to 15 ms. This process heats the Sb₂Se₃ film above 400 °C within milliseconds without damaging the underlying layers of the material stack. Short pulses (less than 5 ms) having higher radiant power damage the Sb₂Se₃ thin films compared to longer pulses. In contrast, during longer pulses, the temperature rises quickly and decreases gradually, even while the light remains on. This is due to the power in the capacitor bank draining, which reduces the lamp’s output and limits the peak temperature at the sample surface. As a result, longer pulses cause less damage and lead to more crystalline films. Therefore, increasing pulse duration or reducing radiant exposure can minimise damage to the Sb₂Se₃ film. Photonic curing has increased the crystal orientations in the hkl, l ≠ 0 ([211] and ([221]) direction of Sb₂Se₃, reduced the surface roughness and decreased the leakage current of the solar cells. The reduced open circuit voltage effectively lowers recombination rates of charge carriers and improves carrier transport. These enhance the power conversion efficiency of Sb₂Se₃ by 46%. Hence, photonic curing shows the capability of curing Sb₂Se₃ thin films and creating high-quality Sb₂Se₃ thin films with high crystallinity without sacrificing surface coverage. This eliminates the rate-limiting annealing step and opens up new opportunities for Sb₂Se₃ photovoltaics.