Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.352
Publication date: 16th December 2024
Colloidal InAs quantum dots (QDs) are gaining increasing interest as optimal infrared (IR) absorbers and emitters for the next-generation optoelectronic IR commercial devices.[1] This is due to their RoHS compliance and the tunability of their optical bandgap, which can be adjusted from approximately 700 nm to over 1600 nm. To date, the most advanced synthesis strategy for InAs QDs relies on pyrophoric, toxic and costly tris-trimethylsilyl arsine (or derivatives).[2] To reduce the cost and hazardousness of InAs QD production, several less toxic and more affordable arsenic precursors have been investigated in recent years, with tris(dimethylamino)arsine (amino-As) emerging as the most promising one.[3]
The current challenge is twofold: first, to enhance control over amino-As InAs quantum dots (QDs) to fine-tune their size and size distribution, thereby producing QDs with a tunable and narrow excitonic absorption peak; second, to develop tailored InAs@shell core@shell heterostructures with customized shell materials, achieving high efficiency as infrared (IR) emitters.
In this talk, I will describe our recent efforts to address these challenges. This involved further advancing our recently published procedure for synthesizing InAs@ZnSe QDs, utilizing amino-As and ZnCl₂ as an additive.[4,5]
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