Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
DOI: https://doi.org/10.29363/nanoge.matsusspring.2025.380
Publication date: 16th December 2024
Three-dimensional tin halide perovskites are promising materials for photovoltaic applications due to their ability to achieve narrower bandgaps compared to their lead-based counterparts. However, a major challenge in advancing their performance is their intrinsic self-p-doping, which occurs even in the absence of external oxidizing conditions. This native p-type behavior is driven by the unique defect chemistry of the material, leading to reduced minority carrier lifetimes and ultimately limiting charge transfer, extraction, and power conversion efficiency. In this talk, we gain deeper insights into the defect chemistry of tin halide perovskites by combining experimental and computational approaches. Spectroscopic techniques, such as photoluminescence quantum yield and carrier lifetime measurements, are used to evaluate key optoelectronic figures of merit, while density functional theory calculations provided insights into defect formation energies. We first highlight pristine stoichiometric films and explored the role of SnF2, a commonly used additive in this class of materials, to understand its impact on defect passivation and optoelectronic properties. Then, we extend our studies to compositional engineering, systematically modifying: A-site cations, B-site cations through Sn-Pb mixing with varying ratios, and X-site halides by introducing iodide-bromide mixed systems. Our findings highlight strategies to modulate defect chemistry and charge carrier dynamics, offering pathways to optimize 3D Sn perovskites for efficient photovoltaic applications.
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