Photovoltaic potential of tin perovskites revealed through layer-by-layer investigation of optoelectronic and charge transport properties
Mahmoud Hussein a, Artem Musiienko a, Marin Rusu a, Antonio Abate a, Thomas Unold a
a Helmholtz-Zentrum Berlin für Materialien und Energie, 14109, Berlin, Germany.
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Unconventional Perovskites and Related Materials: From Synthesis to Applications - #U-PerSA
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Daniele Cortecchia and Teresa S. Ripolles
Poster, Mahmoud Hussein, 636
Publication date: 16th December 2024

Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. However, the performance of tin perovskites is incomparable to lead perovskites for several reasons, including energy band mismatch with the charge transporting layers and high p-doping concentration due to tin oxidation. Researchers have found varying electrical and defect properties for tin perovskite devices, making it challenging to understand its full photovoltaic potential. In this work, we study the electrical, charge transport, and defect properties of the most prevailing FASnI3-based tin devices. Using kelvin probe and photoelectron yield spectroscopy, we investigate the device stack layer-by-layer to construct the band diagram and to quantify the interfacial energy band misalignment and each layer’s contribution to the overall device performance. We found that BCP has a major role in enhancing the open circuit voltage through blending with silver to form an intermediate energy level that dramatically enhances electron extraction. Using time-resolved surface photovoltage, we study the interfacial charge transport dynamics at different charge extraction layers to understand the mechanism of charge extraction in tin perovskites. Based on extensive experimental findings, we developed a model of a solar cell that reveals the limiting factors of tin perovskite technology. For example, we identified a high recombination rate at the FASnI3/HTL interface in the p-p-n architecture due to high excitation and low extraction. As a result, adapting the n-p-p architecture leads to higher extraction and less recombination. By creating a digital twin of the solar cell device, we formulate a roadmap for tin perovskite technology to achieve efficiencies exceeding 22%.

SMARTLINE PV project.

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