Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Publication date: 16th December 2024
Semiconductor low-dimensional materials have attracted much attention in the last decades due to their extraordinary optical and physical properties. These materials are widely used in photovoltaics, bioimaging, and sensors and show an increasing potential for the future. Despite their growing potential, it remains a challenge to properly evaluate their properties at the nanoscale.
Here, a novel nanoscale-oriented method, Kelvin Probe Force Microscopy (KPFM), has proven to be of paramount importance. KPFM is a method that correlates a topographic image with the measurement of the local electric potential at each point of the image, achieving nanoscale resolution in some modes. Such correlation is essential to improve and understand the underlying mechanisms in nanoscale semiconducting materials and devices fabricated with them by comparing the KPFM images under illumination and in the dark.
In this contribution, the organic-inorganic halide perovskite quasi-2D material has been investigated as a possible photodetector using KPFM. The charge generation in the thin (around 100 nm) perovskite layer under different illumination wavelengths was visualized. From this result, it could be concluded that the synthesized organic-inorganic halide perovskite quasi-2D material is a p-type semiconductor.
In addition, we visualized the charge transfer inside the working quantum dots-based solar cell. For this purpose, we used a tapered cross-section of the solar cell at a flat angle to artificially elongate the solar cell layers (the length of all layers was less than 100 nm). Such an approach results in distinguishing the specific layers of the solar cell in the dark and under illumination, revealing the charging of some interfaces. In this specific case, the accumulation of negative charges in the hole transport layer/active layer interface. This allows the improvement of the device in a much more precise manner.
Overall, the use of KPFM opens a unique opportunity to target the improvement of low-dimensional semiconductors and semiconductor devices by simply "looking inside" them.
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