Photoluminescence Quenching in Inkjet-Printed CsPbBr₃ Perovskite Nanocrystals on Graphene Layers: Implications for Photodetector Applications
Júlia Marí-Guaita a, Junaid Khan a, Kenneth Lobo a, Giovanni Vescio a, Sergi Hernàndez a, Albert Cirera a, Blas Garrido a
a Department of Electronic and Biomedical Engineering, University of Barcelona
Materials for Sustainable Development Conference (MATSUS)
Proceedings of MATSUS Spring 2025 Conference (MATSUSSpring25)
Illuminating the Future: Advancements in Photon sources, Photodetectors, and Photonic Applications with 3D and low- dimensional metal halide perovskites - #PhotoPero
Sevilla, Spain, 2025 March 3rd - 7th
Organizers: Emmanuelle Deleporte, Blas Garrido and Juan P. Martínez Pastor
Poster, Júlia Marí-Guaita, 654
Publication date: 16th December 2024

Fully inkjet-printed cesium lead bromide (CsPbBr₃) perovskite nanocrystals integrated with two-dimensional materials like graphene show great promise for optoelectronic applications [1]. Leveraging inkjet printing technology, which offers precise patterning control and minimal material waste [2], we fabricated bilayer heterostructures by sequential deposition of graphene and perovskite layers on glass substrates. These structures are particularly relevant for photodetector applications, where efficient charge separation and extraction are essential for high sensitivity and rapid response times [3]. To understand the fundamental interfacial dynamics, we investigated photoluminescence (PL) quenching at the perovskite-graphene interface. Our measurements reveal an 95% reduction in PL intensity for CsPbBr₃ on graphene compared to pristine CsPbBr₃ films, with observed shifts in the characteristic Raman G-band indicating strong electronic coupling between the layers. The observed PL quenching stems from efficient charge transfer, facilitated by graphene's high carrier mobility. These findings provide crucial insights into the charge transfer dynamics at perovskite-graphene interfaces and demonstrate a scalable fabrication route for next-generation optoelectronic devices.

The authors express their gratitude for the financial support received from the Ministry of Science and Innovation for the national projects LIP-FREE (PID2022-140978OB-I00) and PIXIE-SENS(PDC2023-145804-I00). J.Marí-Guaita acknowledges the financial backing from grant JDC2022-049260-I funded by the Spanish Ministry of Science and Innovation and by the European Union NextGenerationEU/PRTR. 

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