Publication date: 15th December 2025
In this talk, I will begin with recent developments focused on integrating infrared nanocrystal films for infrared imaging [1-2]. Although progress has been impressive, there is still room for improvement. Optical and electronic spectroscopy are often the bridge between materials and devices. Ultraviolet photoemission spectroscopy is widely used to access band alignment on an absolute energy scale, enabling rational choices of electrodes and charge transport layers to pair with a given optically active material.
Although powerful, this method relies on the assumption that the electronic structure of the pristine material remains largely unaffected during integration into a complex environment, despite changes in dielectric surroundings and the presence of applied electric fields. Consequently, there is a strong need for new tools capable of in situ and operando determination of the electronic structure [3].
In this talk, I will demonstrate how X-ray photoemission imaging can be employed to reveal the energy landscape of nanocrystal-based devices. I will present results applied to various geometries, showing how the method provides direct access to gate-induced energy shifts in field-effect transistors (FETs), enabling quantification of their arm lever [3], the in-plane vectorial distribution of the drain-source electric field [4], and the built-in potential of a diode [5]. Additionally, I will discuss how defects influence the operation of an FET and demonstrate that energy-induced modifications extend well beyond the geometric size of the defect.
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