Publication date: 15th December 2025
Electrolyte-gated organic field-effect transistors (EGOFETs) are emerging as powerful, ultrasensitive, label-free biosensors due to their low cost, straightforward electrical readout, and inherent signal amplification. Their operation is based on the formation of two electrical double layers (EDLs) at the organic semiconductor–electrolyte and electrolyte–gate interfaces when a gate voltage is applied. This interaction modulates charge transport along the organic semiconductor, rendering EGOFETs highly responsive to interfacial changes—a property extensively harnessed in biosensor development. A common approach for biosensor fabrication involves the biofunctionalization of the gate electrode using antibody immobilization strategies. Such methodologies have enabled the detection of biologically relevant molecules at ultra-low concentrations, positioning EGOFETs as promising candidates for next-generation point-of-care (PoC) diagnostics. In our group, we have leveraged this platform to detect alpha-synuclein, a biomarker of Parkinson’s disease, with a detection limit as low as 0.1 pM, and to monitor the aggregation kinetics of betaamyloids [1–2]. Despite their diagnostic potential, the portability of EGOFET-based assays is often hindered by the need of integrating them in microfluidic systems and performing multi-step synthetic protocols. To overcome these limitations, we present a simplified EGOFET integrated with lateral flow paper fluidics, enabling a reusable, compact, and cost-effective PoC test with rapid turnaround (~30 minutes). This platform was validated for the detection of Human Immunoglobulin G, demonstrating a broad linear range, high selectivity, reproducibility, and an impressive detection limit of 0.1 fM [3].
References
[1] S. Ricci, S. Casalini, V. Parkula, M. Selvaraj, G. D. Saygin, P. Greco, F. Biscarini, M. Mas-Torrent, Biosensors and Bioelectronics 2020, 167, 112433.
[2] S. Ruiz-Molina, C. Martinez-Domingo, S. Ricci, S. Casalini, Marta Mas-Torrent, ACS Appl. Electron. Mater. 2024, 6, 12, 8998.
[3] M. J. Ortiz-Aguayo, C. Martínez-Domingo, D. Gutiérrez, D: Kos, Adv. Mater. 2025, DOI: 10.1002/adma.202513468.
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