Publication date: 15th December 2025
Electrochemical random-access memory (ECRAM) is widely considered a prime candidate for future memory technologies due to its exceptional scalability and compatibility with standard CMOS processing. In particular, three-terminal synaptic transistors (SynTs) employ ion-conductor gating that enables highly energy-efficient control of ionic doping through redox-mediated processes, thereby decoupling write and read operations and enhancing the linearity of state programming for neuromorphic computing. The inherently faradaic nature of these processes naturally prompts an investigation into the feasibility of exploiting ECRAM devices as energy-storage elements and thereby further improves the system-level energy efficiency of the overall solution .
To evaluate their storage capability, a comprehensive set of electrochemical characterizations is performed. SynTs with extrinsic pseudocapacitive TiO2 channel material have been considered for study and are found to exhibit behavior consistent with that of conventional electrochemical storage systems, with charge capacity scaling according to the applied potential window and active device area. The resulting areal storage capacity surpasses that of high-density capacitor technologies by several orders of magnitude, while maintaining excellent synaptic performance: a nonvolatile conductance modulation on the order of tens of nanoSiemens is enabled by reversible ion intercalation within the channel, and synaptic functions such as long-term potentiation and depression operate with switching energies on the order of femtojoules per square micrometer. Additionally, the devices demonstrate endurance on the order of several hundred thousand weight-update cycles.
Finally, design perspectives are presented illustrating how an ECRAM-based “in-memory energy” approach could offer a novel technological pathway capable of addressing the requirements of both emerging and established application domains.
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