Publication date: 15th December 2025
Short-wave infrared (SWIR, 900-1700 nm) light-sources are fundamental components of a variety of optoelectronic sensing systems, such as machine vision, and light detection and ranging (LIDAR). So far, SWIR light-emitting diodes (LEDs) have been produced by exploiting single-crystal III-V semiconductors (predominantly In1-xGaxAs grown onto InP), whose multi-step epitaxial growth and processing limit deployment in consumer products. Alternative SWIR light-sources are colloidal quantum dots (QDs),1 as they can be synthesized at a considerably lower price than that required for epitaxial crystals. Additionally, QDs are not grown on a substrate, thus they can be readily integrated with well-established and inexpensive complementary metal-oxide-semiconductor (CMOS) technologies. Despite the commercial success of visible QD displays, SWIR QD light-sources are not yet consumer-grade, given the difficulty in achieving high efficiency for emissions beyond 1100 nm in combination with compliance with the European Restriction of Hazardous Substances (RoHS) directives. In fact, state-of-the-art SWIR QD-LEDs are mainly based on toxic Pb- and Hg- chalcogenide QDs; given that progress on colloidal InAs-based QDs has been hindered by reactivity constraints of available As precursors (leading to low photoluminescence quantum yield), size-dispersion challenges, and electroluminescence limited to wavelengths below ≈1006 nm. In this talk, I will present our recent findings on the synthesis of InAs QDs via amino-As precursor,2-4 and their application in LEDs.5, 6 In particular, I will focus on InAs core/shell QDs and respective LEDs delivering photoluminescence/electroluminescence beyond 1100 nm.
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