Publication date: 15th December 2025
As electronic devices continue to evolve toward increasing complexity and reduced feature sizes, the need for operando characterization techniques capable of resolving local electronic structure under realistic working conditions becomes increasingly critical. Synchrotron-based scanning X-ray photoemission spectromicroscopy (SPEM) offers a powerful route to directly probe, with sub-micrometer spatial resolution, the electrostatic energy landscape and electric-field distribution in functional nanoelectronic architectures. In this talk, I will discuss the application of operando SPEM to a broad class of device platforms, including field-effect transistors, heterojunctions, and diodes assembled from thin flakes of two-dimensional (2D) transition metal dichalcogenides, as well as devices based on colloidal nanocrystal (quantum dot) films. By exploiting a highly focused soft X-ray beam generated at the SOLEIL synchrotron using Fresnel zone plates [1], SPEM enables direct mapping of electronic-spectrum shifts induced by applied gate, drain–source, or vertical bias fields, while devices are electrically stimulated in situ. This provides quantitative access to the gate efficiency and enables direct extraction of the gate lever arm, in-plane potential drops, and the full vectorial distribution of local electric fields with sub-μm spatial resolution. In 2D materials-based devices, this technique reveals nanoscale current pathways shaped by flake geometry, thickness, finite-size effects, interface morphology, surface/topographic inhomogeneities [2,3]. In quantum-dot-based devices, the same approach resolves how nanocrystal electronic structure evolves under the combined influence of interfaces with transport layers and operational electric fields, offering insights inaccessible to ex situ measurements alone or standard transport measurements [4]. This capability makes it a versatile tool for the rational design and optimization of nanoelectronic devices, bridging local bias-dependent electronic structure with macroscopic device response.
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