Publication date: 15th December 2025
HgTe quantum dots (QDs) are relevant materials to perform infrared detection and imaging [1], thanks to their unique spectral tunability from the visible to the THz range [2]. Within the infrared spectrum, short-wave infrared (SWIR) range, comprised between 1-2 µm, finds many applications as industrial vision, telecommunication or night vision. However, HgTe QDs are thermal sensitive and sintering can be induced due to heat, leading to a redshift and dramatic enhancement of the dark current. In the perspective of integrating this material in imagery devices [3-4], it is fundamental to bring thermal stability toward the Joule effect induced by the read-out circuit operation. A solution consists in encapsulating these nanocrystals with a shell to prevent sintering. Core-shell HgTe-CdS nanocrystals have been synthetized using highly reactive monomolecular precursor that enables low temperature growth of CdS, suitable with HgTe QDs [5].
Then the material has been integrated into photodiodes for infrared detection with enhanced performances, while also optimizing the surface chemistry. The shell brings several additional benefits beyond the thermal stability such as reduced dark current and high open circuit voltage that now reaches half the optical band gap value.
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