Publication date: 15th December 2025
Indium tin oxide (ITO) remains a benchmark transparent conductive material for semi-transparent perovskite solar cells (ST-PSCs), while silica (SiO₂) coatings enhance device performance through strong anti-reflective properties that improve photon absorption. This study explores the controlled optimization of RF-sputtered SiO₂ films and proposes a room-temperature SiO₂/ITO stacked transparent contact to avoid the high-temperature (>200 °C) processing typically required for high-quality ITO. The optimized stack delivers an average visible transmittance of ~90% (400–1000 nm) and a sheet resistance below 45 Ω/sq, with industrial-scale deposition demonstrated on 4-inch silicon substrates. Films sputtered at low pressure (2 mTorr) and low RF power (100 W) exhibit compact, uniform morphologies with surface roughness below 1 nm, supported by XRD, XPS, TEM, AFM, and Hall effect analyses. Notably, dust accumulation decreases with higher oxygen content in the SiO₂ films, revealing inherent anti-soiling tendencies beneficial for outdoor applications. These findings establish a cost-effective pathway for fabricating transparent conductive oxide layers on temperature-sensitive substrates, advancing the development of scalable, flexible, and efficient optoelectronic devices.
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