Publication date: 15th December 2025
Perovskite-based photodetectors have gained significant attention due to their high absorption coefficients, tunable bandgaps, and excellent optoelectronic properties. In this study, SCAPS-1D numerical modelling was employed to design and optimize a vertical photodetector architecture using CsPbI₃ as the active absorber layer. A systematic optimization strategy was implemented by varying the material selection and physical parameters of the electron transport layer (ETL), hole transport layer (HTL), and perovskite layer. Among the evaluated candidates, WS₂ and Cu₂O emerged as the most suitable ETL and HTL materials, respectively, owing to their favourable band alignment and efficient charge transport characteristics. Critical device parameters—including layer thickness, doping density, defect concentration, interfacial trap states, and electrode work functions—were extensively analysed. The optimized structure, FTO/WS₂/CsPbI₃/Cu₂O/Au, achieved a short-circuit current density of 20.126 mA/cm², a responsivity of 0.48 A/W, and a specific detectivity of 9.5 × 10¹⁰ Jones under a −0.5 V bias. The device exhibited peak photoresponse within the 650–700 nm spectral region and delivered an overall power conversion efficiency of 16.64%. These results demonstrate the value of simulation-driven design in identifying performance-enhancing material combinations and device configurations. Overall, the findings highlight the strong potential of CsPbI₃-based vertical photodetectors for visible-light sensing and provide a solid framework for their future experimental realization.
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