Low-Bandgap Lead Halide Perovskites: Optical Probes of Optoelectronics Properties and Stability
Laura Herz a
a Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
A2 Progress in Narrow-Bandgap Perovskites: Fundamentals and Optoelectronic Applications
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Luis Lanzetta and Tom Macdonald
Invited Speaker, Laura Herz, presentation 124
Publication date: 15th December 2025

Organic-inorganic metal halide perovskites have emerged as attractive materials for solar cells with power-conversion efficiencies of single-junction devices now exceeding 26%. Combinatorial optical characterization approaches are vital for probing and analysing such their electronic properties and material stability.

We demonstrate optical-pump THz-probe spectroscopy with controlled intervals of air exposure as an ideal technique to monitor air-induced degradation of optoelectronic parameters such as charge-carrier mobilities and recombination rates in low-bandgap lead-tin iodide perovskites.[1][2] We explore the best choice of A-cation in lead-tin iodide perovskites with intermediate lead-tin ratios and find that air exposure induces hole doping to a similar extent, for methylammonium (MA) formamidinium (FA), FA cesium (Cs) and FA-only cations. However, we find that MAFA-based perovskites are unstable under heat exposure owing to decomposition of MA, and FACs perovskites suffer from A-cation segregation and an accompanying non-perovskite phase formation.[2] Thus we propose that from a stability perspective, efforts should refocus on FASn0.5Pb0.5I3 which minimizes all three effects while maintaining a suitable bandgap for a bottom cell and good performance.

Tin-halide perovskites currently offer the best photovoltaic performance of lead-free metal-halide semiconductors. However, their transport properties are mostly dominated by holes, owing to ubiquitous self-doping. We demonstrate a noncontact, optical spectroscopic method to determine the effective mass of the dominant hole species in FASnI3, by investigating a series of thin films with hole densities finely tuned through either SnF2 additive concentration or controlled exposure to air.[3] We accurately determine the plasma frequency from mid-infrared reflectance spectra by modeling changes in the vibrational response of the FA cation as the plasma edge shifts through the molecular resonance. Our approach yields a hole effective mass of 0.28me for FASnI3 and demonstrates parabolicity within 100 meV of the valence band edge. An absence of Fano contributions further highlights insignificant coupling between the hole plasma and FA cation.[3]

We further discuss how crystalline film quality and halide segregation are critically affected by bromide fraction x in CH3NH3Pb(I1−xBrx)3 through macrostrain and ordered-phase formation.[4] We show that the overall amplitude of phase segregation follows a broadly symmetric distribution in compositional space, maximized near x = 0.5, but the potentially ordered compositions of CH3NH3PbIBr2 and CH3NH3PbI2Br diverge sharply, presenting particularly stable and unstable scenarios, respectively. Notably, halide segregation is shown to occur even below the widely quoted perceived threshold of x = 0.2. Such analysis highlights promising approaches to mitigate halide segregation, through engineering of macrostrained phases and local atomistic ordering.

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