Overcoming Charge-Carrier Localisation in Metal Chalcohalides
Bembe C. Mackintosh a, Marcello Righetto a b, Thomas Haward a, G Krishna Murthy Grandhi c, N.S.M. Viswanath d, Jae Eun Lee a, Joshua R.S. Lilly a, Snigdha Lal a, Alan R. Bowman a, Paola Vivo c, Laura M. Herz a
a Department of Physics, University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, United Kingdom
b Department of Chemical Science, Università degli Studi di Padova, Via Marzolo 1, I-35131 Padova, Italy
c Faculty of Engineering and Natural Sciences, Tampere University, P.O. Box 541, FI-33014 Tampere, Finland
d Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Republic of Korea
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
A4 Emerging Hybrid and Inorganic Solar Absorbers: Beyond ABX3
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Nakita Noel, Jay Patel and Marcello Righetto
Oral, Bembe C. Mackintosh, presentation 152
Publication date: 15th December 2025

Suboptimal charge-carrier transport remains a major bottleneck for advancing efficient perovskite-inspired material (PIM) solar cells. Even in defect-tolerant systems such as metal chalcohalides, where deep traps are less detrimental, intrinsic charge-carrier localisation can still strongly limit transport. Understanding this localisation process and learning how to suppress it is therefore key for progress in PIMs. Mixed-metal chalcohalides (A₂BCh₂X₃) have recently emerged as promising candidates, offering enhanced chemical stability alongside favourable defect-tolerant optoelectronic properties, with Sn₂SbS₂I₃ showing the highest recorded PCE for this material class. [1]

We will show how charge-carrier localisation can be mitigated in this material family and explain how these behaviours arise through a structural–optoelectronic relationship. By substituting the M(II) cation (Pb, Sn), we tune the lattice from the lower-symmetry and more electronically confined P2₁/c structure in Pb₂SbS₂I₃ to the higher-symmetry Cmcm structure in Sn₂SbS₂I₃, which supports greater electronic dimensionality. This increase in symmetry has pronounced consequences for charge transport: Pb₂SbS₂I₃ exhibits a higher initial mobility (µdeloc = 4.7 cm²/Vs, measured by optical-pump terahertz-probe) but undergoes ultrafast localisation within a few picoseconds. In contrast, Sn₂SbS₂I₃, despite its larger static lattice distortions, shows lower initial mobility (µ = 2.51 cm²/Vs) yet sustains photoconductivity on nanosecond timescales.

The higher electronic dimensionality in the Sn analogue, combined with the reported high-Z ns² electronic contribution, mitigates defect-mediated localisation. These results demonstrate that lower symmetry and reduced electronic dimensionality promote rapid localisation, whereas higher symmetry and greater dimensionality can sustain transport. [2] This provides a clear pathway for compositionally tuning and ultimately overcoming charge-carrier localisation in mixed-metal chalcohalide PIMs.

The authors gratefully acknowledge funding from the Engineering and Physical Sciences Research Council (EPSRC) UK.

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