Publication date: 15th December 2025
InAs colloidal quantum dots (CQDs) are promising for shortwave infrared (SWIR) optoelectronics, due to their size-tunable optical properties, compatibility with CMOS technology, and compliance with the RoHS directive. However, increasing CQD size to achieve extended SWIR (eSWIR) bandgaps and improving charge transport often compromises colloidal stability. Here, we report a growth strategy for ultra-long InAs colloidal quantum nanorods (CQNRs) that maintain quantum confinement while enhancing colloidal stability and charge transport. A key innovation is the precise chemical control through lithium bis(trimethylsilyl)amide (LiN(Si(CH3)3)2) that directly controls their anisotropic growth, enabling the synthesis of nanorods up to ~200 nm in length, orders of magnitude longer than previously reported for colloidal InAs. Transitioning from spherical QDs to nanorods allows size extension without inducing aggregation or precipitation. The resulting CQNRs exhibit excellent colloidal stability and absorption up to 2000 nm in the eSWIR region. Photodiodes fabricated from these CQNRs exhibit very low dark current (6 μA cm-2) and high external quantum efficiency (10.6%), attributed to reduced interparticle grain boundaries confirmed by four-dimensional scanning transmission electron microscopy. This work demonstrates the controlled growth of ultra-long, colloidally stable InAs CQNRs and provides a route to environmentally compliant large CQDs for next-generation high-performance eSWIR optoelectronic devices.
The authors acknowledge the financial support provided by King Abdullah University of Science and Technology (KAUST).
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