Publication date: 15th December 2025
Phosphosulfides are an intriguing family of semiconductors with hardly any history in PV or optoelectronics in general. They are obtained by combining phosphorus with sulfur and one or more metals. Unlike the well-known III-V semiconductors, phosphosulfides incorporate phosphorus in the +5 (rather than -3) oxidation state [1].
We have been studying these exotic semiconductors with an integrated experimental/computational work strategy inspired by the FAIR data principles. Backed by a unique suite of combinatorial thin-film deposition setups with access to S and P sources, we have explored the Cu-P-S, Ag-P-S, Sb-P-S, Sn-P-S, and Ba-P-S phase diagrams by high-throughput experiments and we can now report the first thin-film synthesis of various compounds. Most of these films are single-phase, stable in air, and semiconducting. In spite of unpassivated surfaces and lack of process optimization, some of these semiconductors already exhibit carrier lifetimes above 10 ns and photoluminescence quantum yields above 0.001% [2].
In the spirit of a perovskite-oriented symposium, I will also present a new growth route for the emerging BaZrS3 sulfide perovskite absorber, allowing to crystallize the material at device-compatible temperatures while retaining the photoluminescence and photoconductivity properties of films crystallized at much higher temperatures.
To objectively assess the quality of these early-stage PV materials at their current development stage, I will finally discuss a recently proposed figure of merit for solar absorbers [3,4].
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