Publication date: 15th December 2025
Colloidal quantum dot-based light-emitting diodes (QD-LEDs) are one of the future emissive displays and high-resolution patterning of quantum dot (QD) films is one of the preconditions for the practical use of QD-based emissive display. In this study, we introduce the ZnO interlayer by atomic layer deposition (ALD) to enhance the performance and lifetime of CdZnSeS/ZnS core/shell QD-LEDs. Employing direct optical lithography would be highly beneficial owing to its well-established process in the semiconductor industry. However, exposing the photoresist (PR) on top of the QD film deteriorates the QD film underneath. This is because the majority of the solvents for PR easily dissolve the pre-existing QD films. We present a conventional optical lithography process to obtain solvent resistance by reacting the QD film surface with diethylzinc precursors. It was confirmed that, by simple surface crosslinking of the QD surface and coating of the PR, a typical photolithography process can be performed to generate a red/green/blue pixel of 3000 PPI or more. QD electroluminescence devices were fabricated with all primary colors of QDs; moreover, compared to reference QD-LED devices, the patterned QD-LED devices exhibited enhanced brightness and efficiency. In addition, I will present results on strategies to suppress leakage current when operating QD displays in electroluminescent mode. Finally, I will discuss the results of validating QD-EL devices through a monolithic integration process directly implemented on the backplane.
This work was supported from the National Research Foundation of Korea grant funded by the Korea government (MSIT) (RS-2025-2332372, RS-2024-00411892). This work was supported from the Korea Institute for Advancement of Technology grant funded by the Korean Government (MOTIE) (RS-2025-02263458, HRD Program for Industrial Innovation)
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