Advancing Perovskite Photodetector Architecture: High-Speed p-i-n Devices and Prospects for Blade-Coated Large-Area Integration
Humberto Emmanuel Sánchez a, Fady Elhady a, Davoud Raeyani a, José Moreno a, Silver Turren a, José Marqués a, Juan Pascual Martínez a
a Instituto de Ciencia de los Materiales de la Universitat de València (ICMUV), Paterna 46980, Valencia, España
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
I3 Next-Generation Photonics: Emerging Trends and Innovations in Photon Sources, Detectors, and Photonic Technologies with Halide Perovskite Materials
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Emmanuelle Deleporte and Juan P. Martínez Pastor
Oral, Humberto Emmanuel Sánchez, presentation 313
Publication date: 15th December 2025

Next-generation photonic technologies demand photodetectors that combine high responsivity, low noise, and scalable manufacturing routes. Metal-halide perovskites are rapidly emerging as a leading candidate due to their tunable optoelectronic properties and compatibility with low-temperature solution processing. Here, we present a comprehensive investigation of triple-cation perovskite photodetectors based on a p-i-n architecture employing Csₓ(FA₀.₁₇MA₀.₈₃)₁₀₀₋ₓPb(I₀.₈₃Br₀.₁₇)₃ absorbers. Devices fabricated via spin coating already demonstrate outstanding performance, including suppressed dark current, reduced hysteresis, broadband responsivity of ~0.3 A·W⁻¹, and fast temporal operation with rise times down to 38 μs. These characteristics yield a detectivity above 1×10¹2 Jones, over five times higher than analogous n-i-p devices. The enhanced behavior is attributed to optimized interfacial energetics and efficient charge extraction mediated by 2PACz and C₆₀ transport layers, which minimize trap density and ensure stable diode-like operation. Structural and morphological analysis of the perovskite films reveals densely packed, pinhole-free polycrystalline layers with uniform thicknesses near 560 nm and grain sizes predominantly in the 300-400 nm range. The frequency-dependent response further highlights the superiority of the p-i-n design, preserving high normalized output up to kHz modulation and reaching the -3 dB cutoff at ~9-10 kHz. Building upon these results, this work outlines a pathway toward scalable fabrication via blade coating, a technique particularly attractive for large-area photonic integration. Although current data are based on spin-coated films, the morphological robustness of triple-cation compositions suggests strong compatibility with blade-coated deposition, enabling controlled thicknesses below the grain-size threshold and potentially improving carrier transport and noise suppression even further.

Overall, this study establishes the p-i-n perovskite photodiode as a high-performance, low-noise platform while charting a clear route toward scalable processing for next-generation photonic systems, from optical communication to precision sensing.

Thanks to the project X-Ray photodetectors based on perovskites with ams OSRAM (15% contribution), from the PERTE CHIP Universidad de Valencia, Next Generation – MCIU – GVA

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