Publication date: 15th December 2025
Trap states in Sn-based perovskite reduce the carrier lifetime and responsivity of related photodetection devices. To address this challenge, thiophene-2-ethylammonium halides (TEAX, where X = I, Br, or Cl) were introduced, with the potential to enhance FASnI3 perovskite crystallization[1]. Herein, quasi-2D/3D FASnI3 photodiodes (PDs) fabricated using TEAX, and their photodetection parameters were systematically characterized in correlation with photovoltaic parameters. The addition of TEAI to the active layer of the self-powered PD results in a maximum responsivity of 0.45 AW−1 at 680nm and 0.20 A·W⁻¹ at 840 nm, maintaining sensitivity up to 900 nm. Furthermore, the devices exhibited ultrafast rise and decay times of 1.45 µs and 1.95 µs, respectively, which are among the best reported values for Sn-based perovskite photodiodes[2,3]. By optimizing the C60 thickness in the PIN configuration, dark current and the minimum detectable optical power are reduced. Finally, trivalent cations Sb3+ and In3+ were added to neutralize the Sn2+ vacancies in the best-performing samples, and further improvement of the photocurrent was achieved by the addition of InCl3. These results highlight TEAX-treated quasi-2D/3D FASnI₃ photodiodes as promising candidates for high-performance, and broadband lead-free perovskite photodetectors. However, fabricated devices still suffer from limited VOC, which we are confident to increase in the near future by using more appropriate charge-transport layers.
The authors thank the project X-Ray photodetectors based on perovskites with ams OSRAM (15% contribution), from the PERTE CHIP Universidad de Valencia, Next Generation – MCIU – GVA, and the Spanish MCIU for support through the grant PID2023-151632OB-C21.
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