Publication date: 15th December 2025
The triple-cation lead halide perovskite (CsxMAyFA1-x-yPb(IzBr1-z)3) and tin halide perovskite (FASnI3) demonstrate promising optoelectronic characteristics, such as enhanced light absorption, adjustable bandgap, and efficient carrier transport. Furthermore, their cost-effective solution-based synthesis methods render them highly attractive for photodetection applications. To the best of our knowledge, most existing reports focus on photodiodes (PDs) based on a single perovskite material system, either lead or tin, whereas direct comparative studies evaluating both materials under identical device architecture and measurement conditions are scarce. Therefore, we are motivated to present a systematic side-by-side comparison of triple-cation lead and FASnI3-based p-i-n (inverted) PDs, benchmarking key figures of merit including dark current, responsivity, noise, detectivity, dynamic range, and frequency bandwidth. Both types of devices were encapsulated with epoxy and measured in ambient conditions over several weeks and even months. According to this study, the triple-cation perovskite-based photodiode (Tri-Cat PD) exhibited superior performance compared to the FASnI3-based photodiode (FASI-PD). For instance, dark currents at zero bias are in the order of 10-10 A and 10-9 A for Tri-Cat PD and FASI-PD, respectively. Furthermore, Tri-Cat PDs exhibit the highest responsivity and detectivity, reaching maximum values of 0.46 A/W and 7 x 1013 Jones, respectively, at λ = 735 nm. FASI-PD exhibits a maximum responsivity and detectivity of 0.34 A/W and 1012 Jones, respectively, at λ = 685 nm, with a wavelength detection limit extending up to 900 nm. Notably, Tri-Cat PDs exhibit a fast response with a cut-off frequency of 9 kHz, in contrast to the 5 kHz for FASI-PDs. These findings unequivocally demonstrate the superiority of Tri-Cat PDs over FASI PDs, utilizing the same architecture and charge transport layers. Despite these results, our findings on lead-free PDs are encouraging, prompting further improvements, specifically by reducing the tin oxidation and tin vacancies during the preparation process, as well as employing more suitable charge transport layers.
The authors thank the project X-Ray photodetectors based on perovskites with ams OSRAM (15% contribution), from the PERTE CHIP Universidad de Valencia, Next Generation – MCIU – GVA, and the Spanish MCIU for support through the grant PID2023-151632OB-C21.
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