Publication date: 15th December 2025
Near-infrared photodetection and imaging devices play a crucial role in fields such as biological detection, information communication, and military meteorology. In traditional infrared imaging devices, the detector needs to be integrated with the readout circuit. However, the complexity of the integration process leads to higher device costs and larger pixel unit sizes, which limits the development of infrared imaging systems. By vertically integrating infrared detectors with visible light-emitting devices, the fabrication of infrared upconversion devices can significantly simplify the manufacturing process and facilitate the development of large-area, high-pixel-scale infrared imaging devices. In recent years, the performance of infrared detectors based on novel nanomaterial systems has rapidly improved, providing a new pathway for infrared detection and imaging technologies. We has developed an infrared upconversion imaging device structure based on quantum dots¹, expanding the detection range of upconversion imaging devices and enhancing their efficiency. In recent years, through the regulation of perovskite dimensions and nanostructures, highly efficient perovskite electroluminescent devices have been developed2-4, including highly efficient semi-transparent light-emitting devices. Recently, leveraging perovskite luminescent thin films, we developed a simple, low-cost, and highly efficient infrared upconversion detection device, achieving an equivalent pixel scale of 7 million and a resolution line width of 11 micrometers⁵.
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