Publication date: 15th December 2025
The efficiency of Si single-junction photovoltaic (PV) cells has increased steadily in recent years, and they now demonstrate power conversion efficiencies (PCEs) remarkably close to their efficiency limit.[1,2] Metal halide perovskite materials have emerged as a strong candidate for use in next-generation PV cells, due to their tunable bandgap and ability to be processed on top of Si cells, and have displayed a rapid rise in performance.[3,4] These developments have given rise to high-performing perovskite-on-silicon tandem cells and these tandem cells now perform more efficiently than their individual counterparts.[5] Multi-junction architectures enable PV devices which can achieve significantly increased PCEs due to more efficient energy capture, since these architectures are comprised of different ‘sub-cells’ employing complimentary bandgaps.[6–8] As such, progress in the area of tandem cells has inspired advancements in the area of triple-junction PVs.[9,10] However, these advanced multi-junction architectures are yet to take advantage of the infrared (IR) portion of the AM1.5 spectrum, as efforts have focussed on processing on top of the rear silicon sub-cell.[7] Here, we aim to address this shortcoming through the rational design of IR absorbing materials. In this work, we fabricate mixed lead-tin sulfide thin films by sulfurising lead-tin halide films using hydrogen sulfide gas. We observe complete conversion of the neat halide films over a range of compositions and fit the X-ray diffraction data to known Pb-Sn-S phases. The bandgaps over the range of compositions are measured to be < 1 eV and the optoelectronic properties of the sulfide films are characterised.
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