Publication date: 15th December 2025
One of the most recently emerging platforms for fabrication of single photon sources emitting in the telecom spectral range is a zincblende InAsP quantum dot (QD) embedded in an InP nanowire (NW) [1].They have great potential for perfectly vertically aligned multiple quantum dot molecules and the material system is not restricted via lattice mismatch with the substrate. The optimization of the QD’s properties is still complex and a high topic, mainly due to the difficulty of achieving precise control of their morphology, composition, and structural properties at the nanometer scale. These QDs typically measure only ~10 nm, making even small variations in shape, size, or stoichiometry highly impactful on their electronic structure and optical response [2-4].
To overcome such limitations, we propose the use of advanced scanning transmission electron microscopy (STEM) techniques to perform a comprehensive structural analysis of InAsP QDs grown in InP nanowires by Chemical Beam Epitaxy. High-Angle Annular Dark-Field (HAADF)-STEM, combined with geometric phase analysis (GPA) and high-resolution energy-dispersive X-ray spectroscopy (EDS), enables the correlation of atomic composition fluctuations with strain distribution at the nanometer-scale. This multimodal approach provides direct experimental access to key information with atomic resolution, which is essential for accurate modelling and epitaxial optimization
Preliminary results obtained by such advanced STEM techniques on InAsP QD reveal that the actual composition profiles and strain distributions obtained experimentally differ from theoretical growth expectations and consequently, from QD targeted emission wavelength. Therefore, the employment of STEM techniques will be very useful to determine the QD properties.
In the final work, we will present a set of InAsP QDs obtained using different growth strategies, with the aim of achieving a deeper understanding of how composition and the resulting strain influence the optical properties of investigated nanostructures. This work will allow refining QD growth protocols. A step that is crucial for an effective technological feedback of next-generation quantum emitters.
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