Configuring Two-Dimensional Elemental and Compound Nanosheets for Electronic and Optoelectronic Devices
Alessandro Molle a, Chiara MAssetti a, Carlo Grazianetti a, Christian Martella a
a CNR-IMM Unit of Agrate Brianza, Via Camillo Olivetti, 2, Agrate Brianza, Italy
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
D4 Synthesis and Integration of 2D Materials for Electronics, Photonics, and Functional Devices
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Nikolas Antonatos and Filipa M. Oliveira
Invited Speaker, Alessandro Molle, presentation 460
Publication date: 15th December 2025

Isolation of graphene was a milestone in condensed matter physics paving the way to a new and unprecedentedly rich fashion of two-dimensional (2D) materials. While many of them are derived through exfoliation methods, an urgent need remains as to how they can be produced through scalable synthesis schemes and manipulated in diverse functional configurations by design. Here we will report on bottom-up approaches to the synthesis 2D Xenes, their engineering in new materials configuration or hybrids, and their integration into nanotechnology device applications. Xenes, i.e. single-element 2D crystals, are a representative case in this respect [1]. With silicene stannene, and tellurene as examples, we will describe how the Xenes can be synthesized by interface engineering up to developing new Xene hybrids and heterostructures [2]. As results, we will show how to stabilized silicene membranes for transfer to a target substrate aiming at electronic device applications like silicene transistors on solid-state platforms and silicene piezoresistors on bendable substrates [3,4]. Alternately, silicene will be reconfigured in a hybrid configuration along with other 2D materials like MoS2 or a stand-along flakes aiming at making electronic heterojunctions/layers by design. On the same line, we will also focus on the tellurium chemistry to show how to grow 2D materials with unprecedented properties. Tellurium vapours transported by an inert carrier gas in a chemical vapour deposition reactor are exploited to produce topological ditellurides by tellurization of a pre-desposited metal film or tellurium nanosheets down to the 2D level (tellurene). In the former case, we will report on the growth of PtTe2 Dirac semimetals aiming at the fabrication of THz plasmonic gratings [5]. In the latter case, tellurium nanosheets on Au-based substrates are designed for diode cells with memristive behavior [6]. The reported cases are examples of how to engineer and configure Xene towards prototypical device structures targeting flexible electronics, nanophotonics, and nanoelectronics.

 

ERC-CoG grant n. 772261 “XFab”, ERC-PoC 2023 grant n. 101069262 “XMem”, ERC-PoC 2024 grant n. 101187967 “TNext”, MUR PRIN 2020 grant n. 2020RPEPNHPE3 “Photo”, MUR PRIN 2022 grant n. 2022XMYF5E “ITER”.

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