From 2D Projections to Atomistically Precise 3D Reconstructions of InP Quantum Dots
Juliette Zito a b, Nadine J. Schrenker a b, Kim Corinna Dumbgen c d, Sandra Van Aert a b, Sara Bals a b, Zeger Hens c d
a Electron Microscopy for Materials Science (EMAT) and NANOlab Center of Excellence, University of Antwerp, Antwerp, Belgium
b Nanolab, center of excellence, University Antwerpen, Belgium
c Department of Chemistry, Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
d Center for Nano and Biophotonics, Ghent University, Belgium, Belgium
Proceedings of MATSUS Spring 2026 Conference (MATSUSSpring26)
D2 Quantum dots from III-V semiconductors – from synthesis to applications
Barcelona, Spain, 2026 March 23rd - 27th
Organizers: Zeger Hens and Ivan Infante
Invited Speaker, Juliette Zito, presentation 473
Publication date: 15th December 2025

Next-generation III–V quantum dots (QDs) with enhanced optoelectronic properties and stability are expected to emerge from a complete understanding and control of their surface characteristics—specifically their three-dimensional (3D) atomic configuration, chemical composition, and bonding interactions. Although electron tomography is among the most powerful techniques for reconstructing the 3D atomic structure of nanomaterials, its application to III–V QDs remains challenging, as these systems are highly susceptible to structural degradation under prolonged electron-beam exposure. As a result, current 3D structural models of III–V QDs are typically inferred from 2D low-dose annular dark-field scanning transmission electron microscopy (ADF-STEM) projections through visual comparison and iterative manual adjustments.

To move beyond this qualitative and time-consuming approach, we developed a highly efficient AI-driven workflow that integrates quantitative transmission electron microscopy with molecular modeling. In this talk, we show how this combined experimental–theoretical protocol enables the generation of highly accurate and experimentally validated 3D models of novel InP QDs, including reliable reconstructions of their surface and interface atomic configurations.

J.Z. acknowledges FWO grant 12AA526N

© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO
We use our own and third party cookies for analysing and measuring usage of our website to improve our services. If you continue browsing, we consider accepting its use. You can check our Cookies Policy in which you will also find how to configure your web browser for the use of cookies. More info