Publication date: 15th December 2025
Filamentary oxide-based memristors, especially those based on HfO₂, have attracted significant interest due to their CMOS compatibility, well-defined resistive states, fast switching speed, and high endurance [1]. Their operation relies on the reversible formation and partial disruption of oxygen-vacancy conductive filaments, driven by redox reactions and field-assisted ion migration within the oxide layer [2]. A detailed understanding of forming, SET, and RESET processes reveals the strong dependence of switching characteristics on voltage amplitude, current compliance, and material stack engineering [3]. Moreover, multilevel resistance states can be achieved by carefully tuning the applied voltage during programming, enabling fine control of filament dimensions and conductance levels [3]. A major challenge for these devices is their intrinsic cycle-to-cycle variability. Experimental data show significant dispersion in SET/RESET voltages, arising from the stochastic nature of vacancy generation, filament regrowth, and gap evolution across cycles [4]. Reliability concerns also include random telegraph noise (RTN), caused by trapping/detrapping events near the filamentary path, as well as irreversible current fluctuations associated with structural modifications within or around the conductive filament [5]. In long-term operation, the memory window gradually narrows due to oxide degradation mechanisms that affect filament stability. Beyond switching performance, these devices exhibit synaptic-like behavior such as gradual potentiation and depression under pulsed stimuli, together with multilevel conductance states, and they can reproduce spike-timing-dependent plasticity (STDP), where the conductance change depends on the relative timing between pre- and post-synaptic spikes [6,7]. Although challenges remain regarding linearity, asymmetry, and energy efficiency, these characteristics highlight the versatility of filamentary oxide-based memristors and their potential for a broad range of emerging electronic applications.
This work was supported through Grant No. PID2022-139586NB-C42, funded by MICIU/AEI/10.13039/501100011033 and FEDER, EU, and by project CR32023-040125, funded by MICIU/AEI/10.13039/501100011033. Additional support was received from the Generalitat de Catalunya (AGAUR), through project 2021 SGR 00497.
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