Publication date: 15th December 2025
A large number of promising two-dimensional (2D) semiconductor materials, represented by black phosphorus (0.3 eV), transition metal dichalcogenide (TMDCs) (<2 eV), and hexagonal boron nitride (6 eV), have been extensively studied in optoelectronic devices. However, the spectrum of large-band gap materials remains very narrow, limiting the application for broadband optoelectronic devices. The broad family of III–VI monochalcogenides are a relatively unexplored part of the layered semiconductor family with the intralayer structure X–M–M–X, where M is a group III element (Ga, In) and X is a chalcogen (S, Se, Te). We present the synthesis and fabrication of high-performance broadband photodetector based on a few layers of GaTe with different dopants (Zn, Cd, Sb). The polarity of dopants was characterized by Hall measurements. Also, we have fabricated heterojunctions with Zn-doped GaTe (p-type) and As-doped GaSe (n-type). Fabricated devices were irradiated with different wavelengths (300-1100 nm) of light, showing outstanding responsivity with low dark current and a high on/off ratio. Time-resolved photocurrent measurements were also performed, which exhibit a fast response time. We have calculated the electronic band structure and density of states of the samples. We also have designed photodetectors using multiscale modeling to explore the device's performance. By using a semiconductor module for theoretically modeled devices, the terminal current across the device with respective wavelength was calculated and compared with the experimental results.
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