Publication date: 15th December 2025
Oxide heterostructures are common building blocks for memristive devices, where electron, ion, and thermal transport across the stacked layers critically define device performance for neuromorphic computing applications. In particular, the band alignment between oxides and the spatial distribution of trap states strongly influence current transport mechanisms, thereby shaping the resistance window, switching voltage, and read-out conditions. The relative position of traps governs the dominant transport pathways, while the resulting electric-field distribution sets the switching speed. Trap-induced transient charging further increases required read-out voltages and limits read-out speed.
In this contribution, we present a comparative study of non-filamentary, area-dependent memristive device stacks in which ionic motion and resistance modulation occur across the full device area. We focus on devices employing p-type Pr₀.₇Ca₀.₃MnO₃ (PCMO) and n-type InGaZnO (IGZO) stacked with other metal oxides. We compare band-bending calculations with experimentally determined band alignments obtained via in-situ XPS studies and operando hard X-ray spectroscopy.
We discuss how how the babd alignment and the trap positions influence switching polarity, control the transition between transport regimes, and impact switching voltage and read-out delay. Our findings highlight how engineered trap landscapes and interface band structures can be leveraged to optimize non-filamentary memristive device performance.
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