Publication date: 15th December 2025
Next-generation flexible electronics require a deep understanding of the mechanical limits of 2D semiconductors to ensure their effective use in strain-engineered devices. Herein, we investigate the elastic scaling behavior of gas-phase CVD-grown atomically-thin 2H-MoS2 films for various thickness 0.75–15 nm. Mechanical crossover at a critical thickness tc ~3.0 nm has found, below which nanoscale elastic-size effects dominate, defining a true-2D regime, while thicker films (t > tc) exhibit bulk-like behavior. The Young’s modulus scales with thickness as E ∝ t−1.16, whereas the bending modulus follows D ∝ t2.91, marking a transition from atomically-flexible to a rigid-regime for t > tc. Monolayer MoS2 exhibit a maximum elastic strain energy of 1.55 J/cm², arising from strong in-plane strain induced by van der Waals epitaxial coupling. These results offer essential mechanical benchmarks for guiding the design of strain-engineered, flexible MoS2 devices.
We are thankful to Science and Engineering Research Board (SERB), Department of Science and
Technology (DST), Government of India for the financial support under the Research Grants No.
ECR/2016/000918 and CRG/2021/002938. We gratefully acknowledge SRMIST for the seed
grant and startup research grant for the establishment of the micro-Raman spectrometer and other
characterization facility. Z.S. was supported by ERC-CZ program (project LL2101) from Ministry of Education Youth and Sports (MEYS) and by the project Advanced Functional Nanorobots (reg. No. CZ.02.1.01/0.0/0.0/15_003/0000444 financed by the EFRR).
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