Publication date: 15th December 2025
Contactless electroreflectance (CER) is a very powerful absorption like technique to investigate semiconductor materials and heterostructures [1] including hybrid heterostructures containing van der Waals (vdW) crystals. Due to the Franz-Keldysh effect, this method can be used to study the built-in electric field in semiconductor heterostructures as well as the Fermi level position on semiconductor interfaces such as vdW/GaN interfaces [2, 3]. Engineering the Fermi level position on AlGaN surface is very important for fabrication of electrical contacts to AlGaN with desired characteristics, i.e. ohmic or Schottky contact. In this paper we will present how to determine the Fermi level position at the vdW/III-N interface, and then focus on our recent progress in the engineering the Fermi level position in hybrid vdW/III-N heterostructures including photovoltaic detectors based on the vdW-stack/AlGaN junction with vdW-stacks composed of graphene, h-BN, MoS2, WS2, MXene, and other two-dimensional crystals.
This work was supported by the National Science Centre Poland through OPUS Grant No. 2022/45/B/ST7/02750.
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