Publication date: 15th December 2025
Colloidal quantum dots (QDs) of III-V semiconductors have attracted wide interest of the last 10 years. These materials comply with regulations on toxic elements and feature band-gaps covering a broad range of the electromagnetic spectrum. Furthermore, recent breakthroughs in colloidal synthesis have extended the range of accessible materials from InP and InAs to InSb and Ga-based semiconductors. However, opposite from QDs made from II-VI, IV-VI or lead halide perovskite materials, InP or InAs core QDs show little or no photoluminescence. While this issue can be adressed through shell growth, applications such as infrared sensing work best with core QDs, for which a lack of photoluminescence implies rapid trapping of photogenerated charge carriers. In this presentation, we discuss the relation between the intrinsic properties of III-V bulk semiconductors, the geometry of III-V QDs and the formation of surface states that result in charge-carrier trapping and non-radiative recombination. Using density functional theory, we show that in the case of III-V semiconductors, the very presence of crystal facets can lead to the formation of surface orbitals. Given the surface chemistry of actual InP and InAs QDs, we show that chemical passivation can suppress such surface orbitals on In-rich facets, but not on P-rich facets. We provide experimental evidence that such surface orbitals exist in a variety of III-V QDs, and we present new directions to suppress the formation of such orbitals in III-V QDs.
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